二氯化铁晶体（99.995%） FeCl2 晶体类型：合成 晶体纯度：＞99.995% bandao半岛电子 最新层状过渡金属化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具体请咨询在线客服

二碘化镍晶体（99.995%） NiI2 晶体类型：合成 晶体纯度：＞99.995% bandao半岛电子 最新层状过渡金属化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具体请咨询在线客服

碘化镓（碲掺杂）晶体（99.995%） GaTeI 晶体类型：合成 晶体纯度：＞99.995% bandao半岛电子 最新层状过渡金属化合物材料，新增材料： FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具体请咨询在线客服

Titanium bromide (TiBr3) is a 2D antiferromagnetic / ferromagnetic semiconductor. Crystals exhibit perfect 0001 plane orientation as well as perfect in-plane crystallinity as evidenced by XRD

The first and only commercially available Mg(OH)₂ crystals were grown using float zone synthesis technique to yield perfectly layered, large size

CdI₂ is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown. It crystallizes in generally known as CdI2 crystal structure as show