欢迎来到 半岛游戏平台 网站
咨询热线

13651969369

当前位置:首页>半岛登录注册>二维材料>其他二维材料> 2D SemiconductorsTiS3 nanosheets 三硫化钛纳米片

TiS3 nanosheets 三硫化钛纳米片

简要描述:TiS3 nanosheets are different from our TiS3 crystals in that TiS3 nanosheets have been directly grown onto Ti thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos

  • 更新时间:2022-04-24
  • 产品型号:2D Semiconductors
  • 厂商性质:生产厂家
  • 访 问 量:524

详细介绍

Advantages of TiS3 nanoribbons over TiS3 crystals

Similar to TiS3, Ti/TiS3 nanosheets stacks can be mechanically exfoliated onto variety substrates
VLS grown TiS3 are already really thin (~10) this mechanical exfoliation enables you to achieve monolayers much easily compared to bulk TiS3
It is ideal for high update (battery, gas sensing / storage) applications
TiS3 is a layered material like MoS2 and other layered systems. However, the crystal displays strong crystalline anisotropy which results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. Recent studies have proposed TiS3 as high carrier mobility 2D transistors [1], new IR material [1], as well as polarized emission material [2,3]. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment.

Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

Crystal size ~ 1 cm

Material characteristics

High carrier mobility semiconductor
2D anisotropic semiconductor
2D Catalytic material
Related literature

[1] "Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility"; Angew Chem Int Ed Engl. 2015 Jun 22;54(26):7572-6

[2] Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3; Nature Communications volume 7, Article number: 12952 (2016) doi:10.1038/ncomms12952 [Link]

[3] Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties; Scientific Reports volume 6, Article number: 22214 (2016)

[4] Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets; Nanoscale, 2017,9, 4175-4182

Publications from this product

H. Yi et. al. The band structure of the quasi-one-dimensional layered semiconductor TiS3(001) Appl. Phys. Lett. 112, 052102 (2018)

产品咨询

留言框

  • 产品:

  • 您的单位:

  • 您的姓名:

  • 联系电话:

  • 常用邮箱:

  • 省份:

  • 详细地址:

  • 补充说明:

  • 验证码:

    请输入计算结果(填写阿拉伯数字),如:三加四=7
半岛游戏平台
  • 联系人:陈谷一
  • 地址:江苏省泰州市凤凰西路168号
  • 邮箱:taizhou@sunano.com.cn
  • 电话:021-56830191
联系我们

扫一扫以下二维码了解更多信息

销售微信咨询

网站二维码

版权所有©2024半岛游戏平台 All Rights Reserved 备案号:苏ICP备17000059号-2 sitemap.xml总访问量:40574
管理登陆技术支持: 化工仪器网
Baidu
map