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h-BN 超大尺寸氮化硼

简要描述:World's largest size h-BN crystals are available! Our h-BN crystals now measure 5-6 mm in size much comparable to other traditional layered crystals. After 3 years of research and engineering

  • 更新时间:2022-05-25
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详细介绍

World's largest size h-BN crystals are available! Our h-BN crystals now measure 5-6 mm in size much comparable to other traditional layered crystals. After 3 years of research and engineering, our team has developed state-of-the-art h-BN growth technique (Epitaxial solidification technique© patent pending) to synthesize these large size crystals. In this growth technique, boron and nitrogen elements are first dissolved in our secret metal alloy liquids formula at high temperatures (T>2200C) in RF coils under controlled pressure / environment. Once the precursors are dissolved, the temperature is carefully reduced at designed rates to reject B and N atoms slowly. During the rejection B and N atoms epitaxially bind to seed high quality h-BN crystals to achieve large size h-BN crystals. Once the growth is complete special care is given to purification to ensure 6N purity h-BN crystals with sharp Raman spectra, excellent diffraction pattern, and easy exfoliation characteristics. Since the crystals are large, the exfoliation process is rather simple and monolayers as large as 50-100 um can be achieved using standard exfoliation techniques.

Each order contains three or more crystals that measure <5mm in size. If your research needs even larger size h-BN crystal (8-9mm) please reach to us. Our team can arrange dedicated growth to achieve such sizes.

Advantages of epitaxial solidifcation technique h-BN growth

World record size hBN crystals. Reaching 5mm! The first in the commercial market
Large exfoliated h-BN monolayers. Excellent layered nature and easy exfoliation characteristics enabling getting large monolayer sheets using simple exfoliation
High purity. Unmatched 6N (99.9999%) secondary ion mass spectroscopy (SIMS) confirmed h-BN crystals.
Electronic and optical grade. No mid-gap defects



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