硫硒化钼晶体 MoSSe(Molybdenum Sulfide Diselenide)
晶体尺寸:~6毫米
电学性能:半导体
晶体结构:六边形
晶胞参数:取决于合金成分:a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.