Nb2SiTe4

Nb2SiTe4is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers.Nb2SiTe4crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. OurNb2SiTe4crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.