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Ternary copper indium selenide crystallizes inCuIn7Se11stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity and wide spectral response range, layeredCuIn7Se11has been utilized in electronics, photodetectors, catalysis, and energy conversion technologies. Our materials have been synthesized using Bridgman growth technique using Cu2Se, In2Se3, and Se precursors. Each precursors are selected at 5.5N (99.9995%) purity to realize highest grade and single phaseCuIn7Se11crystals. Typical growth process takes 3-5 weeks and each synthesis method only produces ~3-4mm sized crystals.
Advantages
Pure single phase without any InSe, In2Se3, or CuSe phase formation
Large single domain size (single crystal)
Bridgman grown which means no halides (I, Br, Cl, or other agents) are present in the crystal matrix.
High purity 99.9995% or higher.
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