Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS₂ matrix.

Years of growth optimization lead to our flawless n-type MoS2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

Zirconium disulfide (ZrS₂) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoS2 crystals.

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems.

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems.