The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are per

14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

Our WSSe alloys with the chemical formula WS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure. ZrSe2 is 0.95 eV indirect gap semiconductor in the bulk form.

The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenides family with the

Bulk PdSe2 (palladium diselenide) has been predicted to exhivit 30 meV band gap which increases to 1.43 eV indirect gap (theoretical).